App note from ON Semiconductors about reverse polarity battery protection using MOSFETs and their MOSFET driver for efficiency. Link here (PDF) When the vehicle’s battery is damaged and needs replacement the probability of connecting the new battery in reverse is high. Since many electronic control units (ECU) in the vehicle are connected to the vehicle’s […]
Tag Archives: MOSFET
App note: Understanding the MOSFET peak drain current rating
App note from Nexperia on an explanation of the derivation of the maximum drain current as a function of pulse duration rating. Link here (PDF) Historically the IDM capability is shown in the limiting values section of the data sheet for tp ≤ 10 µs. ID at DC (continuous) is also shown. IDM is traditionally […]
App note: Power MOSFETs in linear mode
App note from Nexperia about MOSFET characteristics in linear mode within their SOA. Link here (PDF) Power MOSFETs are extensively used as switches due to the very low RDSon and thus low conduction losses. However, in many applications MOSFETs are used in their saturated state, with certain cases requiring both these modes to be robust […]
App note: Continuous DC current ratings of International Rectifier’s large semiconductor packages
App note from International Rectifier on how to optimize the maximum current handling of power FETs. Link here (PDF) There is a trend within the discrete power component industry of late to increase the dc current rating for low on-resistance devices to levels that historically have not been seen. This trend has accelerated as power […]
App note: High-side smartFETs with analog current sense
App note from ONSEMI about their high side SmartFETs and their specific application. Link here (PDF) The “end requirement” from a high side SmartFET is to switch loads, and there are different alternatives, available in market, towards that end. Relays, for instance, have been used for long in the industry to switch various automotive loads, […]
App note: Design and application guide of bootstrap circuit for high-voltage gate-drive IC
A deeper dive into controlling gates of MOSFETs with boostrap circuits talked in this app note from ON Semiconductors. Link here (PDF) The purpose of this paper is to demonstrate a systematic approach to design high−performance bootstrap gate drive circuits for high−frequency, high−power, and high−efficiency switching applications using a power MOSFET and IGBT. It should […]
App note: dV/dt ratings for low voltage and high voltage power MOSFET
App note from Alpha & Omega Semiconductor, Inc. about the importance of voltage ramp and diode recovery dV/dt and avalanche breakdown ratings of power MOSFET. Link here (PDF) dV/dt rating is an important parameter for the ruggedness of power MOSFET. It is usually a parameter shown in high voltage Power MOSFET (BVdss ≥ 500V) datasheets, […]
App note: Power MOSFET continuous drain current rating and bonding wire limitation
App note from Alpha & Omega Semiconductor about current limitations on MOSFETs with exposed pads. Link here (PDF) Power MOSFET datasheets will usually show maximum values for continuous drain current Id, on the first page of datasheets. For bottom exposed part such as DPAK, TO220, D2PAK, there is always a note besides Id rating saying […]
App note: MOSFETs withstand stress of linear-mode operation
App note from IXYS talking about MOSFET operating in linear region in application like electronic load. Link here (PDF) Power MOSFETs are most often used in switchedmode applications where they function as on-off switches. But in applications like electronic loads, linear regulators or Class A amplifiers, power MOSFETs must operate in their linear region. In […]
App note: Load switches for mobile and computing applications
App note from Nexperia presenting simple load switches in mobile and computing applications. Link here (PDF) There are several reasons why a circuit or subsystem is required to be disconnected from the power supply using a load switch. A very simple and very common reason is that it helps saving power. An unpowered subsystem can […]
App note: P-channel power MOSFETs and applications
Another app note from IXYS on P-Channel power MOSFET application. Link here (PDF) IXYS P-Channel Power MOSFETs retain all the features of comparable N-Channel Power MOSFETs such as very fast switching, voltage control, ease of paralleling and excellent temperature stability. These are designed for applications that require the convenience of reverse polarity operation. They have […]
App note: Failure signature of electrical overstress on power MOSFETs
Nexperia app note about MOSFET’s destruction investigative hints that can be used for design improvements. Link here (PDF) When Power MOSFETs fail, there is often extensive damage. Examination of the size and location of the burn mark, the failure signature, provides information about the type of fault condition which caused the failure. This document provides […]
App note: Designing in MOSFETs for safe and reliable gate-drive operation
This app note from Nexperia discuss’ gate drive designs for safe operation of MOSFET. link here (PDF) The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage (VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst […]
App note: 1 kV SenseFET integrated power switch
App note from ON Semiconductors on their FSL4110LR power switch for SMPS power supplies. Link here (PDF) Some industrial equipment that are supplied from a threephase AC power source such as industrial drives and energy meters often need an auxiliary power supply stage that can provide a regulated low-power DC source for analog and digital […]
App note: Recommendations to avoid short pulse width issues in HVIC gate driver applications
Application note from ON Semiconductors discussing possible abnormalities on High voltage gate driver when operating on short pulses. Link here (PDF) The High−Voltage Integrated Circuit (HVIC) gate driver family is designed to drive an N−channel MOSFET or IGBT up to 600 V. One of the most common methods to supply power to the high−side gate […]
App note: Low-side self-protected MOSFET
Integrated fault protected MOSFET app note from ON Semiconductors. Link here (PDF) The ever increasing density and complexity of automotive and industrial control electronics requires integration of components, wherever possible, so as to conserve space, reduce cost, and improve reliability. Integration of protection features with power switches continues to drive new product development. The often […]
App note: Intelligent power switches for 48 V battery applications
Application note on controling Intelligent Power Switches (IPS) from STMicroelectronics. Link here (PDF) For the last 15-20 years, the automotive electronics market has been moving from electromechanical relays to solid state components for driving all kind of loads. It is obvious why: solid state components are smaller in size, lighter, silent, easy to mass produce […]
App note: Using trench technology MOSFETs in hot swap applications
Safely use trench MOSFETs on hot swap application by determining its operation within its SOA in a limited time, app note from International Rectifier. Link here (PDF) Hot Swap circuits are used to allow for “Hot Plugging” of circuit boards into back planes. The applications that require such functionality are mission critical, such as servers […]
App note: Driving MOSFET and IGBT switches using the Si828x
App note from Silicon Labs on their MOSFET and IGBT driver Si828x and how to determining its external components to achieve optimized performance. Link here (PDF) The Si828x products integrate isolation, gate drivers, fault detection protection, and operational indicators into one package to drive IGBTs and MOSFETs as well as other gated power switch devices. […]
App note: Gate drive characteristics and requirements for HEXFET power MOSFETs
App note from International Rectifier on driving their Power MOSFETs. Link here (PDF) The conventional bipolar transistor is a current-driven device. A current must be applied between the base and emitter terminals to produce a flow of current in the collector. The amount of a drive required to produce a given output depends upon the […]