App note: Failure signature of electrical overstress on power MOSFETs

Nexperia app note about MOSFET’s destruction investigative hints that can be used for design improvements. Link here (PDF) When Power MOSFETs fail, there is often extensive damage. Examination of the size and location of the burn mark, the failure signature, provides information about the type of fault condition which caused the failure. This document provides […]

App note: Designing in MOSFETs for safe and reliable gate-drive operation

This app note from Nexperia discuss’ gate drive designs for safe operation of MOSFET. link here (PDF) The MOSFET gate-source threshold voltage (VGS-th) and maximum gate-source voltage (VGS-max) are key parameters that are critical to the reliable operation of MOSFETs. The threshold voltage represents the voltage at which the MOSFET starts to turn on, whilst […]