A deeper dive into controlling gates of MOSFETs with boostrap circuits talked in this app note from ON Semiconductors. Link here (PDF)
The purpose of this paper is to demonstrate a systematic approach to design high−performance bootstrap gate drive circuits for high−frequency, high−power, and high−efficiency switching applications using a power MOSFET and IGBT. It should be of interest to power electronics engineers at all levels of experience. In the most of switching applications, efficiency focuses on switching losses that are mainly dependent on switching speed. Therefore, the switching characteristics are very important in most of the high−power switching applications presented in this paper. One of the most widely used methods to supply power to the high−side gate drive circuitry of the high−voltage gate−drive IC is the bootstrap power supply.