App note from ONSEMI about proper handling of IGBTs, the main issue is that static can build-up on IGBTs gate-source junction enough to damage it, discussed also in this app note on ways to safely work with IGBTs. Link here (PDF) One of the major problems plaguing electronics components today is damage by electrostatic discharge […]
Tag Archives: IGBT
App note: Effect of gate-emitter voltage on turn on losses and short circuit capability
Things to look for and avoid when designing with IGBT devices discussed in this app note from Onsemi. Link here (PDF) This application note describes some of the impacts of the gate-emitter voltage on the IGBT device performance. Unlike the MOSFETs and BJTs, the magnitude of the gate-emitter supply voltage of an IGBT has a […]
App note: A new IGBT with reverse blocking capability
App note from IXYS on their new modified structure IGBT that have built-in reverse current blocking. Link here (PDF) A new IGBT has been developed, providing reverse blocking capability. This feature is needed in various applications, such as in current source inverters, resonant circuits, bidirectional switches or matrix converters. This paper presents technology of the […]
App note: Reading onsemi IGBT datasheets
Helpful app note from ONSEMI that will guide you to their IGBT parameters. Link here (PDF) The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating. If the application requirements are well understood, the correct IGBT can easily be […]
App note: 5kW High-Efficiency Fan-less inverter
A novel inverter design by ROHM and Power assist technology. Link here (PDF) We employ trans-linked interleaved circuits as inverter circuits that utilize the high frequency switching performance of silicon carbide (SiC) MOSFET, achieving a power conversion efficiency of 99% or more at 5 kW. Since this circuit topology allows a reduction in the inductance […]
App note: Parallel operation of IGBT discrete devices
Guidelines for parallel operation of IGBT devices discuss in this app note from IXYS. Link here (PDF) As applications for IGBT components have continued to expand rapidly, semiconductor manufacturers have responded by providing IGBTs in both discrete and modular packages to meet the needs of their customers. Discrete IGBTs span the voltage range of 250V […]
App note: Gate-source voltage behaviour in a bridge configuration
App note from ROHM semiconductor on MOSFETS and IGBTs. Link here (PDF) Power switching devices such as MOSFETs and IGBTs are used for various kinds of power supply applications, power supply line switching components, and other power applications. In addition, the circuit topologies used are diverse, parallel and series connections are widely used, not to […]