App note from ON Semiconductors about Silicon Carbide MOSFETs, their difference and gains over Silicon MOSFETs. Link here (PDF)
Among the Wide Band Gap materials silicon carbide (SiC) is by far the most mature one. The raw wafer quality has greatly improved over the last years with significant reduction of micro pipes and dislocations. Silicon carbide devices can work at high temperatures, are very robust and offer both low conduction and switching losses. The high thermal conductivity makes SiC also a perfect choice for high power applications, when good cooling is required. Compared to silicon switches, silicon carbide MOSFETs inherit some specific characteristics like the shift of gate threshold a designer should be aware of. This effect will be explained in this application note.